Optical bistable SOI micro-ring resonators for memory applications

The present work focuses on experimental investigations of a bistabile silicon-on-insulator (SOI) micro-ring resonator (MRR). exploits continuous-wave operation the carrier-induced bistability demonstrating stable hysteresis response at through and drop ports when input power exceeds threshold value. Flipping optical provides convenient mechanism for switching MRR output characteristics between two steady states having long holding time. transition these is experimentally investigated. It shown that speed limited by low-to-high 188 ns. Obtained results shows an application passive SOI as all-optical memory cell with complementary outputs.